A fundamental-only behavioral model is extracted from DUT-Ievel swept power load-pull data that is capable of accurately predicting output power, gain and efficiency of high power RF transistors as a function of input drive level, load impedances, frequency and gate bias. The model is implemented with a sub-set of the X-parameter components and is easily ported to modern CAD tools as an X-parameter file. It provides a convenient method for evaluating the performance of RF power transistors in different Doherty PA architectures and can be used to design and optimize matching network, phasing lines and dynamic load modulation for efficient Doherty operation. The model was used to design a symmetric LDMOS DPA with first pass success, that achieved 55% drain efficiency at average power of 45dBm with 62dBc ACPR after DPD correction using a 4-C GSM, 6.2dB PAR signal at 1.842GHz.
IndexTerms-behavioral modeling, PHD model, X parameters, Load-pull, Doherty PA .In (b) max Pout=49.6 dBm with 0.2dB contour step and max PAE=65.7% with 1 % contour step. Yos=28Y, IOQ=350mA, Freq=1.84GHz output of a fixed tuned circuit, the packaged RF transistor, or the intrinsic transistor die in the case where the pre-match characteristics are known, IB I can be calculated from Pout 2 , 1 and f L such that 2 �U1Z0ll r J
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