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Rapid thermal annealing (RTA) for the electrical activation of 300-keV Si+ implants in GaAs at doses of (6–8) ×1012 cm−2 is shown to be superior to conventional annealing. Higher gateless field-effect transistor saturation currents and greater uniformities of the saturation current were measured as well as higher peak electron concentrations and mobilities. The advantages of RTA for the removal of ion implantation damage in GaAs are attributed to the heating rate being two orders of magnitude greater than that for furnace annealing. Characteristics are given for single- and four-cell GaAs power metal-semiconductor field-effect transitions fabricated using the above implant and optimized RTA conditions. A 1-μm gate length by 2400-μm gate width device has demonstrated an output power of 1.73 W with 4.9 dB associated gain, 30% power-added efficiency, and 8.1 dB linear gain at 10 GHz.

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