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In this paper, an efficient router for reducing "antenna effect" damage is reported. The antenna effect is a phenomenon of gate-oxide degradation by charge buildup on conductors in plasma-based manufacturing processes. It directly influences yield and reliability of VLSIs. The amount of the degradation is a direct function of interconnect geomebiy (e.g., amount of floating conductors connecting to the gate oxide during the processes). The proposed router combines a traditional router and a mcdification of wires for reducing the antenna effect damage using a rip-up and reroute method. It reduces the damage with only a little penalty of die size and performance. The effectiveness of the router, which is implemented in the layout system HGALOP, is demonstrated by experimental results on 3-4 level metal industrial sea-of-gates (SCG) circuits.

A composite Ag-La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3 (LSGM) thin film cathode was synthesized on the LSGM electrolyte successfully by a simultaneous RF sputtering of Ag and LSGM. Microstructure of the thin composite film cathode was examined by FE-SEM and EDX. Nano-size LSGM particles existed in the grain boundary of the Ag thin film, and prevented the agglomeration of Ag. As a result, crystal grains of the Ag thin film cathode became small, and although it was a thin film, it had high thermal stability. The coexistence of Ag and LSGM was investigated by FE-SEM, and EDX. There was no elemental migration between Ag and LSGM. The initial performance and durability of the composite Ag-LSGM thin film as reduced-temperature SOFCs (LT-SOFCs) cathode operated at 500 to 600 o C were studied by the three-probe ACimpedance method. The composite Ag-LSGM thin film cathode has a larger cathodic interfacial conductivity , σ E , than that of the pure Ag thin film cathode.

Memory-state [low-resistance state (R L ) and highresistance state (R H )] dependence of random telegraph noise (RTN) of Ta 2 O 5 /TiO 2 resistive random access memory is investigated. The conduction mechanism of both memory states and a limit of resistance controllability are also investigated to clarify the difference in the RTN mechanism of both states. The boundary between the R L and R H states was found at 5-20 kΩ, and the conduction mechanism much depended on the memory state. The noise also depended on the memory state. The noise amplitude in the R H state was larger than that in the R L state. In the R H state, a tunnel barrier was generated to cut off a conduction path (filament), and traps inside the tunnel barrier were supposed to increase the noise amplitude. Moreover, the composition of the following degraded the noise distribution in the R H state: 1) capture and emission of charges with traps and 2) instability of these traps against the bias temperature stress.Index Terms-Filament, noise, random telegraph noise (RTN), resistive random access memory (ReRAM), resistive switch, RRAM, Ta 2 O 5 , TiO 2 .

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