Indium tin oxide (ITO) thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the films are polycrystalline of cubic structure with preferentially oriented along (222) plane. SEM images show that films exhibit uniform surface morphology with well-defined spherical particles. The EDX spectrum confirms the presence of In, Sn and O elements in prepared films. AFM result indicates that the surface roughness of the films is reduced as Sn doping. The optical transmittance of ITO thin films is improved from 77% to 87% in visible region and optical band gap is increased from 3.59 to 4.07 eV. Photoluminescence spectra show mainly three emissions peaks (UV, blue and green) and a shift observed in UV emission peak. The presence of functional groups and chemical bonding was analyzed by FTIR. Hall effect measurements show prepared films having n-type conductivity with low resistivity (3.9 × 10 −4-cm) and high carrier concentrations (6.1 × 10 20 cm −3).

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Transparent conducting Tin doped Cadmium oxide thin films were prepared by sol-gel spin coating method with different Sn concentrations. X-ray diffraction analysis reveals the polycrystalline nature of the Cadmium oxide (CdO) with cubic structure and show preferential orientation along (111) plane. The surface morphology of prepared films was analyzed by SEM and surface roughness variations analyzed by water contact angle measurement. The EDX spectra confirmed the presence of Cd, Sn and O elements in the films. The blue shift of energy gap from 2.42 to 2.96 eV is explained by Burstein-Moss effect. The presents of functional groups and the chemical bonding are confirmed by FTIR spectra. The minimum electrical resistivity (1.12 × 10 −4 cm) and maximum carrier concentration (9.94 × 10 21 cm −3) was obtained for 5% of Sn doped CdO thin film.

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