1091 Experimental studies show that in the manufacture of photoelectric transducers (PETs) and during their operation, a wide range of their characteristics (efficiency, short circuit current, and open circuit voltage) occurs [1]. This range is observed under identical conditions for manufacturing structures and may vary from 10 to 30%. The main cause of this range is that the initial material for manufacturing PETs is inhomogeneous. Under modern conditions, increasingly more attention is paid to polycrystalline mate rials during the production of PETs. Therefore, the problem of testing the planar inhomogeneity of both the initial materials and finished PETs is urgent, especially at the stage of refining their manufacturing technique. To provide these tests, it is necessary to design metrological equipment that enables the fore casting of PET parameters. The solution of this problem will allow one to formulate the requirements for the initial raw materials, whose application will ensure the minimal range of the output parameters of PETs and the attainment of the maximum possible efficiency.In this connection, the need for detailed measurement of major electrophysical parameters (resistivity, the lifetime of nonequilibrium charge carriers (NCCs), and the polarity of silicon conductivity) arises at the stage of inspection tests in PET manufacturing. It is also necessary to develop procedures that allow tests of these parameters in finished PETs.In this study, nondestructive microwave and optical methods for contactless local measurements of resistivity, the NCC lifetime in single crystal and polycrystalline semiconductors, and lifetime in PETs were studied.
THE PROBLEM OF MEASURING POLYCRYSTALLINE SEMICONDUCTORSOne of the promising and cheap materials for manufacturing solar cell panels is multisilicon, which is produced at the ZAO Kremnii (Irkutsk, Russia). The multisilicon manufacturing technique calls for the performance of detailed measurements, in particular, of resistivity. Measurement of this parameter in a polycrystalline material has been a complex problem because of the presence of intergrain boundaries in crystals. In particular, direct current measurements using such known methods as the four probe method and its variants, the Van der Pau method, the Hall effect, etc., are difficult. Contactless microwave meth ods for measuring these parameters are considered in this work.
ANALYSIS OF CONTACTLESS MEASUREMENT METHODS FOR SILICON RESISTIVITYThe contact method is based on recording the current flowing through a sample. The parameters of a semiconductor can be determined by different methods [5], e.g., by measuring the photoconductivity, photocurrent, photo emf, Hall emf, magnetoresistance, or photoluminescence. The advantage of contact 1 Abstract-Nondestructive microwave and optical methods for contactless local measurements of resistivity, the lifetimes of minority charge carriers in single crystal and polycrystalline semiconduc tors, and lifetimes in photoelectric transducers are investigated.
