We present excellent performance and reliability characteristics of a Silicon nanocrystal (Si-nc) 4 Mb NOR Flash array (90nm technology node). Main original technological improvements are a cylindrical symmetry of the 1-Transistor bitcell, which significantly increases the coupling ratio (particularly critical in Si-nc memories), and the use of an optimized ONO control dielectric, which prevents from parasitic charge trapping during cycling. Results shown here in terms of memory performance, high temperature reliability, endurance and disturbs are, at our knowledge, outstanding compared to literature state-of-theart and demonstrate the high potential of this technology for embedded memory applications.

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The thermal management of power converters is not only crucial for their own optimal operation and reliability, but also for the overall system in which they are operating. Reliability is a very serious aspect because power electronics systems are being increasingly widely adopted in mission-critical applications in the e-mobility sector, in smart grids, and other applications where safety and operational continuity are essential. The current trend towards miniaturization of power conversion systems and, consequently, towards high power density solutions is speeding up the diffusion of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). GaN HEMT-based high power density converters must be properly managed, making the estimation of the thermal characteristics of these devices essential. This paper proposes the use of some Thermo-Sensitive Electrical Parameters (TSEP) for a simple and effective thermal resistance evaluation. The primary advantages and limitations of these TSEPs have been critically analyzed. The analysis highlighted that the use of the gate-source voltage is the best approach. However, it requires direct access to the gate pin, which may not be available externally in some system-in-package solutions.