-In this paper, a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology is presented. The divider is implemented in a 0.13-μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 14.8% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -127.76 dBc/Hz at 1-MHz offset. The output power of the divider is higher than -9 dBm from 53 to 61 GHz, and a good figure of merit (FOM) of 2.19 is achieved.Index Terms -CMOS, forward body-biasing, injection-locked frequency divider (ILFD), low supply voltage, phase-locked loop. I. INTRODUCTIONThe voltage-controlled oscillator (VCO) and high frequency divider are the two primary blocks of the phase-locked loop (PLL), which is widely used in wireless applications. The main design concerns of the VCO are the oscillating frequency, output power, and phase noise. Furthermore, the main design concerns of the frequency divider are the operating frequency and locking range. For mm-wave PLL, in order to cover the frequency shift of VCO caused by the process variation, a wide frequency locking range for the divider is essential. In addition, the output power of the frequency divider is also important for the second divider stage. Numerous frequency dividers have been reported for different applications. Generally, high frequency dividers can be classified into dynamic logic, regenerative and LC-resonator types. While dynamic logic frequency dividers can achieve very low power consumption and various division ratios, they can only operate in a few gigahertz.Common-mode logic (CML) dividers [1] and Miller dividers have the advantages of high operating frequency and wide locking range, but usually suffer from high power consumption. In contrast, injection-locked frequency dividers (ILFD) can easily operate at the high frequency but also have low power consumption, and thus are commonly used in mm-wave PLL as the first divider stage. Nevertheless conventional ILFD has the disadvantage of a narrow locking range as a result of the large parasitic capacitance of the input transistor. To address this weakness, direct injection-locked frequency dividers (DILFD) using different techniques have been developed [2]-[6].In this paper, the design of a V-band direct injection-locked frequency divider using body bias technology for wide locking range is presented. This work achieves an operating frequency from 53 GHz to 61.68 GHz as well as low power consumption.