Doped n-and p-type hydrogenated silicon (Si:H) thin films prepared by plasma enhanced chemical vapor deposition have been investigated for uncooled microbolometer applications. The material microstructure has been studied by in situ real time spectroscopic ellipsometry collected during thin film deposition or ex situ spectroscopic ellipsometry measurements on a static sample with a multiple sample analysis technique. The key electrical properties of interest, including film resistivity (q), temperature coefficient of resistance (TCR), and 1/f noise, have been measured as a function of deposition conditions for p-type amorphous hydrogenated silicon (a-Si:H) films and microcrystalline content for n-type amorphous (a), microcrystalline (lc), and mixed-phase amorphous þ microcrystalline (a þ lc) Si:H films. The TCR and 1/f noise values were compared for p-and n-type a-Si:H samples in the resistivity range of 100 < q < 3000 X cm and show that for a given resistivity, amorphous p-type films exhibit a lower 1/f noise, which might be expected due to a larger density of majority carriers. V

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