The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Landé g-factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multi-frequency continuous-wave electrically detected magnetic resonance experiments. The measurements were performed on identical devices under similar conditions in order to independently assess the magnetic field-dependent spin-mixing mechanism, the socalled Δ mechanism, which originates from differences in the charge-carrier g-factors induced by spinorbit coupling.

Replacing all protons on a polymer by deuterium has a dramatic impact on spin-dependent properties of the material in devices.

Conjugated polymers are anisotropic in shape and with regard to electronic properties. Little is known as to how electronic anisotropy impacts the underlying characteristics of the electron spin, such as the coupling to orbital magnetic moments. Using multifrequency electrically detected magnetic resonance spectroscopy extending over 12 octaves in frequency, we explore the effect of spin-orbit coupling by examining the pronounced broadening of resonance spectra with increasing magnetic field. Whereas in three commonly used materials, the high-field spectra show asymmetric broadening, as would be expected from anisotropic g-strain effects associated with the molecular structure, in the conducting polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) the spectra broaden isotropically, providing a direct measure of the microscopic distribution in g-factors. This observation implies that effective charge-carrier g-tensors are isotropic, which likely originates from motional narrowing in this high-mobility material.