Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 × √19) substrates via Co evaporation and post deposition annealing. This (√19 × √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7×7) reconstruction occurred at the cost of Si(111)-(√19 × √19).

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Abstract:This paper reports our scanning tunneling microscopy and spectroscopy (STM/STS) study of double-walled and multi-walled carbon nanotubes (CNTs) of different diameter deposited on Bi 2 Te 3 (narrow gap semiconductor). The approximate diameter of the studied double-walled and multi-walled CNTs was 2 nm and 8 nm, respectively. Crystalline Bi 2 Te 3 was used as a substrate to enhance the contrast between the CNTs and the substrate in the STS measurements performed to examine peculiarities of CNT morphology, such as junctions, ends or structural defects, in terms of their electronic structure.