Pulsed UV laser deposition was exploited for the preparation of thin Sn50–x As x Se50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50–x As x Se50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn m Se n + clusters with low m and n values were observed.

During the last decades, Ge-Sb-Te thin films have attracted attention due to their ability to transition quickly and reversibly between their amorphous and crystalline phases. Hence, they have wide applications in phase change memories, 1-4 thermal energy storage, 5 photonics, 6 holography, 7 and so forth.To improve the properties of Ge-Sb-Te phase change materials, their chemical composition can be altered using two approaches. First, the composition is modified. For example, Ge-Sb-Te compounds, along with the pseudobinary GeTe-Sb 2 Te 3 tie line, which includes Ge 1 Sb 2 Te 4 and Ge 8 Sb 2 Te 11 , were investigated aside from the prototypical Ge 2 Sb 2 Te 5 composition. 8,9 In the other approach, they are doped or alloyed with other elements. For example, the Ge and Te in Ge 8 Sb 2 Te 11 material were partially replaced by Sn and Se, respectively. Such prepared thin films demonstrate high electrical and reflectivity contrasts between their crystalline and amorphous phases. 10 Aside from the Ge-Sb-Te system, the Ga-Sb-Te system has been studied bearing in mind the applications in the