It is reported that alterations in protein glycosylation are present in adult rheumatic diseases; however, the data related to pediatric rheumatic conditions are very scarce. The aim of this study was to assess the effect of juvenile idiopathic arthritis (JIA) on the serum glycosylation profile of transferrin isoforms. Twenty-five patients with different clinical forms of an active JIA and 22 healthy controls were studied. Serum samples were analyzed by capillary electrophoresis on MINICAP electrophoretic system (Sebia, France) to determine the levels of transferrin isoforms. In patients with JIA, tetrasialotransferrin (median 82.6%; range 68.8–99.5) concentration was lower (P = 0.032), and pentasialotransferrin (median 14%; range 0.5–31.2) was higher (P = 0.020) in comparison to controls (median 84.45; range 79.8–87.4; median 11.55; range 9.7–16.1, respectively). No significant correlations between concentration of transferrin isoforms and disease activity score (JADAS 27) or the degree of disability (VAS and CHAQ) were found. Erythrocyte sedimentation rate and CRP levels correlated positively with disialotransferrin (R = 0.493, P = 0.017; R = 0.850, P < 0.001, respectively) and pentasialotransferrin (R = 0.533, P = 0.006; R = 0.491, P = 0.045, respectively), and negatively with trisialotransferrin (R = − 0.546, P = 0.007; R = − 0.515, P = 0.049, respectively) and tetrasialotransferrin (R = − 0.436, P = 0.029; R = − 0.504, P = 0.039, respectively). This preliminary study shows the shifts in transferrin isoforms profile among patients with JIA. Our data indicate a potential clinical utility of the transferrin isoforms measurement, especially tetrasialotransferrin and pentasialotransferrin. Further prospective studies on larger groups of patients should be conducted to validate the results.

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The failure localization on analog & mixed mode ICs in functional mode (AC signals) has become more and more challenging in the last few years. Due to an increasing integration and complexity of these devices, the number of defects, especially those named “soft”, raised considerably. The classical Dynamic Laser Stimulation (DLS) techniques showed some limitations when applied to analog & mixedmode ICs. The SDL (Soft Defect Localization) technique [1] based on binary output signal allows us to localize only the most sensitive areas. The defect in this type of circuits, which are very sensitive to the laser beam [2], is often characterized by a weaker sensitivity than that of “healthy” regions. Hence, xVM (Variation Mapping) techniques were introduced to map some parameters in an analog way (the different sensitivity levels are visualized). To date, the T-LSIM technique [3], the Delay and the Phase Variation Mapping techniques were published [4, 5]. We have already had some interesting results by using these techniques [6] but not every “soft” defect case study could be resolved in that way. In this paper we propose to look at some different parameters which characterize an analog signal and can be used as an input for laser mapping. By applying a simple setup, without any additional sophisticated tool, we show on a “golden” commercial IC the added value of this analysis. We also deal with amplifying the weak signal variations induced by the laser beam scan which often are hidden by the high signal variations in analog or mixed-mode ICs.

This paper presents a case study on reliability reject on a Freescale mixed-mode IC. It focuses on a novel use of one of most frequently used failure localization techniques: static emission microscopy (EMMI) to localize a failure due to an electrical transient behavior. This work helped Freescale to identify a wafer fab process limitation and contributed to test improvement.

Soft defect localization techniques based on laser stimulation have become key techniques for a wide range of FA/debug issues. In this paper, we demonstrate the ability of these techniques to solve critical design issue in mixed-mode device for automotive application which includes analog, logic, RF and power. Utilizing a wide range of laser stimulation techniques, we have determined the most efficient approach for this device to achieve the shortest cycle time. We have established a clear link between fault isolation by laser stimulation techniques and the abnormal behavior of the device with relevant and complete simulation at transistor level.