No abstract

We show that graphene-percolated polymer composites exhibit fractional capacitance response in the frequency range of 50 kHz–2 MHz. In addition, it is shown that by varying the loading of graphene within the matrix from 2.5% to 12%, the phase can be controllably tuned from −67° to −31°, respectively. The electrostatic fractional capacitors proposed herein are easy to fabricate and offer integration capability on electronic printed circuit boards.

All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10(3)), good retention characteristics (>10,000 s), and stability in ambient storage (>3 months).

We demonstrate that functional groups obtained by varying the preparation route of reduced graphene oxide (rGO) highly influence filler morphology and the overall dielectric performance of rGO-relaxor ferroelectric polymer nanocomposite. Specifically, we show that nitrogen-doping by hydrazine along the edges of reduced graphene oxide embedded in poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) results in a dielectric permittivity above 10 000 while maintaining a dielectric loss below 2. This is one of the best-reported dielectric constant/dielectric loss performance values. In contrast, rGO produced by the hydrothermal reduction route shows a much lower enhancement, reaching a maximum dielectric permittivity of 900. Furthermore, functional derivatives present in rGO are found to strongly affect the quality of dispersion and the resultant percolation threshold at low loading levels. However, high leakage currents and lowered breakdown voltages offset the advantages of increased capacitance in these ultrahigh-k systems, resulting in no significant improvement in stored energy density.

In this work, native GaO x is positioned between bulk gallium and degenerately doped p-type silicon (p + -Si) to form Ga/GaO x /SiO x /p + -Si junctions. These junctions show memristive behavior, exhibiting large current−voltage hysteresis. When cycled between −2.5 and 2.5 V, an abrupt insulator−metal transition is observed that is reversible when the polarity is reversed. The ON/ OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10 8 and retain the ON and OFF resistive states for up to 10 5 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.