As technology size scales down toward lower 2-digit nanometer dimensions, sensitivity of CMOS circuits to radiation effects increases. Static Random Access Memories (SRAMs) that are mostly employed as high performance and high-density memories are prone to radiation induced Single Event Upsets (SEUs). Therefore, designing reliable SRAM cells have always been a serious challenge. In this article, we propose two novel SRAM cells namely RHD11 and RHD13 that provide more attractive features than their latest proposed counterparts. Simulation results show that, our proposed SRAM cells as compared with some state of the art designs have considerably higher robustness against Single Event Multiple Effects (SEMU). Moreover, they offer a sensible area overhead advantage so that, our proposed RHD11 SRAM cell has 19.9% smaller area than the prominent dual interlocked cell (DICE). The simulation results and analyses show that, our proposed SRAM cells especially the proposed RHD13 has a considerable lower failure probability among the considered recent radiation hardened SRAM cells.
Index Terms-Soft error, Single Event Upset (SEU), SingleEvent Multiple Effect (SEME), SRAM cell.
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