The suitability of frequency-dependent alternating-current scanning electrochemical microscopy (4D AC-SECM) for investigation of thin passivating layers covering the surface of corrosion-inhibited metals has been demonstrated. Inhibition of copper corrosion by benzotriazole (BTAH) and methylbenzotriazole (MBTAH), which are effective inhibitors for this metal under many environmental conditions, was investigated. Strong dependencies were found for the AC z-approach curves with both the duration of the inhibitor treatment and the frequency of the AC excitation signal applied in AC-SECM. Both negative and positive feedback behaviours were observed in the AC approach curves for untreated copper and for Cu/BTAH and Cu/MBTAH samples. Negative feedback behaviour occurred in the low-frequency range, whereas a positive feedback effect was observed at higher frequencies. A threshold frequency related to the passage from negative to positive regimes could be determined in each case. The threshold frequency for inhibitor-modified samples was found always to be significantly higher than for the untreated metal, because the inhibitor film provides electrical insulation for the surface. Moreover, the threshold frequency increased with increasing surface coverage by the inhibitor. 4D AC-SECM was successfully applied to visualizing spatially resolved differences in local electrochemical activity between inhibitor-free and inhibitor-covered areas of the sample.
Alternating current scanning electrochemical microscopy (AC-SECM) is used to investigate the inhibition of copper corrosion by four model organic molecules, namely benzotriazole (BTAH), 5-methyl-benzotriazole (MBTAH), 2-mercaptobenzimidazole (MBI), and ethyl xanthate (EX). It is shown that the formation of inhibitor films on the metal can be followed from the decrease of the substrate's conductivity associated with the formation of inhibitor-containing surface layers. Very sensitive 3D imaging can also be performed that accounts for changes in chemical reactivity of the modified surfaces, as well as for their corrosive attack from the environment. AC-SECM is considered a powerful technique for the investigation of corrosion processes.
Scanning electrochemical microscopy visualizes concentration profiles. To determine the location of the probe relative to topographical features of the substrate, knowledge of the probe-to-sample distance at each probe position is required. The use of electrochemical impedance spectroscopy for obtaining information on the substrate-to-probe distance and on the concentration of interest using the electrochemical probe alone is suggested. By tuning the frequencies of interrogation, the probe-to-substrate distance can be derived followed by interrogation of processes that carry information on concentration at lower frequencies. These processes may include charge-transfer relaxation, diffusional relaxation at the electrode, and open-circuit potential at zero frequency. A potentiometric chloride sensing microprobe is used herein to reconstruct both topography and the concentration field at a microscopic diffusional source of chloride.
Alternating-current scanning electrochemical microscopy (AC-SECM) is employed to characterize the early stages of the degradation reactions occurring in metal-coating systems upon exposure to an aqueous environment. The spatial resolution of the technique results from the measurement of changes in the resistance of the thin electrolyte layer comprised between the tip and the surface of the coating due to variations in the tipsubstrate distance. Resistance measurements are conducted at various frequencies of the AC perturbation signal effectively allowing topographic changes to be monitored as a function of time. Furthermore, AC-SECM can be used to determine the tip-substrate distance without the addition of redox mediators to the electrolyte, which might affect the chemical properties of the system. In this way, the effect of chloride ions from the aqueous phase to induce either the heterogeneous absorption of water by the coating, or its accumulation at the metal-substrate interface, has been imaged.
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