The technology of 3D bioprinting has gained significant interest in biomedical engineering, regenerative medicine, and the pharmaceutical industry. Providing a new scope in tissue and organ printing, 3D bioprinters are becoming commercialized for biological processes. However, the current technology is costly, ranging from USD$9,000-$30,000 and is limited to customized extrusion methods. Multiple microfluidic pump systems for bioink extrusion are commercially available at USD$30,000. Additionally, the use of Cartesian systems for 3D printing restricts the user to three axes of movement and makes multi-material modeling a challenge. Consequently, it was proposed to design a cost effective robotic 3D bioprinting system, compatible with peptide bioinks which were developed at KAUST Laboratory for Nanomedicine. The components of the system included a programmable robotic arm, an extruder for bioprinting, and multiple microfluidic pumps. The extruder was designed using a coaxial nozzle made of three inlets and one outlet. The programmable microfluidic pumps transported the peptide bioink, phosphate buffer saline (PBS) and human skin fibroblast cells (in cell culture media solution) through the nozzle to extrude a peptide nanogel thread. Model cell structures were printed and monitored for a period of two weeks and subsequently found to be alive and healthy. The system was kept well under a budget of USD$3,500. Future modifications of the current system will include adding a custom bioprinting arm to allow multi-material printing which can fully integrate and synchronize between the pumps and the robotic arm. This system will allow the production of a more advanced robotic arm-based 3D bioprinting system in the future.

Layered hafnium diselenide (HfSe2) is an emerging Van der Waals semiconductor in which a hafnium layer is sandwiched between two selenium layers. Owning to its indirect band gap with magnitudes close to silicon's band gap and high predicted carrier mobility, hafnium diselenide material is a strong candidate for device applications. Here, the effect of laser treatment on 2H‐ HfSe2 devices is shown in ambient conditions using µ‐Raman spectroscopy. It is shown that an emerging Raman peak evolves with increasing laser exposure time. It is also shown that top‐down fabricated 2H‐HfSe2 devices exhibit an anomalous p‐type behavior post laser treatment, with Ion/Ioff ratio as high as 103. This anomalous conductivity change can be observed after thermal and electrical annealing. For bottom‐up devices, it is observed that p‐type conductivity with remarkable Ion/Ioff ratio reaching 104. This conductivity switch can also be shown on 1T‐HfSe2 devices post laser irradiation and high Vds bias treatments. Based on the circuit model, this conductivity switch is attributed to contact doping caused by an increase in the Schottky barrier height at each contact, which shifts the Fermi energy closer to the valance band. These results demonstrate a unique conductivity switching mechanism for HfSe2‐FET devices.

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