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In the present work, a high-k dielectric HfO2 and Lead Zirconate Titanate (PZT) have been incorporated as a ferroelectric layer in the gate stack. The Ion/Ioff ratio obtained of the order of 1013, and the subthreshold swing 49.7 mV/dec are the most captivating findings of the device which outshines earlier findings. There is a significant improvement in the on-state current (Ion) and off-state current (Ioff). Furthermore, comparatively high value of transconductance (gm) and transconductance generation factor (gm/Id ), due to the incorporation of 20 nm PZT NC ferroelectric layer, insinuates that the device could be used in low power applications. These enticing findings of the proposed PZT GAA-NCFET nanowire could pave the way for low power devices.

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