This article introduces a novel nonisolated single-switch high step-up DC-DC converter using a tri-winding coupled inductor (TWCL) for renewable energy applications such as PV systems. Also, the voltage multiplier cell (VMC) is used to attain a high voltage gain. The used VMC acts as a passive clamp circuit and reduces the voltage stress across the power switch. So, a low voltage-rated power switch can be used in the presented converter. The suggested topology uses only one power switch with low on-state resistance (RDS-ON), which leads to a simple control circuit and decreases the conduction losses. Highefficiency, operating with low duty cycle, low peak voltage over semiconductor elements, low turns ratio, the number of the coupled inductor, and high voltage conversion ratio are the significant benefits of the recommended DC-DC converter. To show the achievement of the presented structure, operational mode principles, steady-state, efficiency calculations, and comparison results are provided. Finally, a 120 W experimental prototype with 200 V output voltage and 50 kHz switching frequency is built to prove the usefulness of the suggested high step-up converter. The efficiency is measured 92.11% at rated power.

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A Asymmetrical Double-trench SiC MOSFETs are discussed in terms of the reverse recovery characteristics and its impact on the avalanche ruggedness of the device, based on different failure mechanisms. The experimental measurements are performed at a wide range of switching rates and temperatures ranging from 25°C to 175°C. Two different experimental test circuits are used for the double pulse measurements of the body diode and the unclamped inductor switching experiments. The DC link voltage in UIS tests have been increased step by step till the failure of the devices. The measurements indicate that the SiC planar MOSFET has the largest reverse recovery charge among the SiC devices, only seconded to the significant reverse recovery charge of the Silicon Superjunction device. The measurements of the avalanche ruggedness indicate that the Symmetrical doubletrench SiC MOSFET is more rugged compared to other device at room temperature while the Asymmetrical double-trench SiC MOSFET is more rugged at high temperatures.