We report and discuss UV patterning technology of nanoLED with ultra‐high‐resolution. Additionally, we also report on the performances of the ultra‐high‐resolution nanoLED panel for ARJVR by UV patterning technology.

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We investigated the effect of the CeO 2 buffer layer thickness on YBCO films prepared on CeO 2 /YSZ/CeO 2 -buffered Ni-electroplated Cu tapes. The thickness of the CeO 2 layer was found to be critical. The thickness of the CeO 2 seed layer was varied to be from 80 to 300 nm and the thickness of the CeO 2 cap layer was varied to be from 40 to 80 nm. To avoid the formation of cracks, we found that the thicknesses of the CeO 2 seed layer and CeO 2 cap layer must be less than 80 nm and 40 nm, respectively. Detailed SEM and AFM observations indicated a possible relation between the cause of crack formations and the thermal expansion coefficient differences of the films and the substrate. A smooth, continuous and crack-free surface was obtained on CeO 2 (40 nm)/YSZ/CeO 2 (80 nm) Ni-electroplated Cu tape. The YBCO films prepared on the CeO 2 /YSZ/CeO 2buffered Ni-electroplated Cu tapes revealed a transport J c exceeding 3.6 MA/cm 2 at 77 K in a self-field.