Heterostructures based on two-dimensional (2D) materials have demonstrated huge potential in various modern-day electronic and optoelectronic devices, but their optoelectronic properties are strongly influenced by the defects present in these materials. Hence, an in-depth understanding of the role of defects is vital in designing high-performance optoelectronic devices. Here, we investigated the role of defects in the electronic transport and photoresponse properties of a silicon−MoS 2 p−n junction heterostructure through temperature-dependent electrical studies and demonstrated a method for improving their photoresponse. The presence of space-charge-limited transport with exponentially distributed trap states was evident from the temperature-dependent I−V characteristics. The temperature dependence of the ideality factor and intensity-dependent photoresponse also elucidated the nature of defects. The amplitude of low-frequency 1/f noise was observed to decrease with an increase in temperature, revealing the significant influence of defects on the charge transport. These defects can often cause recombinations, diminishing the photoresponse and severely degrading the optoelectronic properties. A significant enhancement in photoresponse by reducing the recombination centers was obtained by altering the surrounding dielectric environment. For a particular dielectric, the enhancement was observed to be more prominent toward low temperatures. In addition, the surrounding dielectric also effectively suppressed the low-frequency noise levels in the heterostructure. Insights from this study would help in designing and improving the properties of low-dimensional optoelectronic devices.

Herein we report the synthesis of Ag doped MnWO4 material carried out by facile hydrothermal method and its catalytic property towards glucose molecules. The Ag-MnWO4 material is characterized by XRD, SEM and EDX respectively. The morphology of the synthesized material is nanorod like structure and the nanorods are converged with each other constructing microflower structure. The microflowers are uniform and sparsely distributed in all direction. The fabricated Ag-MnWO4 electrode performs huge sensitivity of 17.9 µAµM− 1cm− 2 in the linear range 5-110 µM with response time 8 s. Further, excellent selectivity and acceptable stability of the material are achieved. It is predicted that Ag-MnWO4 material would be a good glucose catalytic material for sensing applications.