This paper discussed the fabrication of cesium iodide (CsI) and nickel (Ni) tubes in the anodic aluminum oxide (AAO, Al2O3) template by dropping-drying, electroless deposition, and anodization processes. The CsI dopes with Tl as scintillator can converts incident X-ray into visible light with very high conversion efficiency of optical photons. The CsI compound is so soft and extremely hygroscopic, it is very difficult to polish to obtain a smooth and optical flat plane. However, the nano-scale flat plane can be achieved when CsI was deposited in AAO template. The ionic compound of CsI can dissolve in water to form I- and Cs+. And, I- and Cs+ can absorb on AAO to form crystalline CsI after removing or drying water. Because CsI has a good wetting adhesion with AAO CsI can easily form nanoparticles and further thin film on AAO wall.

This paper discussed fabrication of a very low thermal resistance of thermal interface membrane (TIM). It is assumed that anodic aluminum oxide (AAO) template with silver nanowires inside can function very well as TIM. The TIM was made of well-aligned silver nanowires are expected to reduce the thermal resistance between the heat sink and the electronic device, a chip for example. This work also calculated the pore density, surface area, and porosity of AAO, and thermal conductivity values of AAO with different diameter nanowires inside.

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The ordered nanochannel-array of anodic titanium oxide (ATO) is formed on the electro-polished titanium substrate. This reproducible procedure of long-range ordered nanochannel ATO retains 170 nm films in length. The process is deduced by electrochemically and thermodynamically; from high defect structure of porous ATO and small sizing of decomposing TiO2cluster on the surfaces. In this study, ATO with 68.2% porosity is discomposed at 581 °C under oxygen partial pressure of 4×10-9atm. The pore of ATO has wall thickness of 25 nm with density of 8×109per cm2under 1.2 vol.% hydrofluoric acid (HF) and 10 vol.% sulfuric acid (H2SO4) electrolyte for 90 seconds of 20 V of applied potential. The pore size is 100 nm in diameter and uniformly distributed with 120 nm pore-to pore distance in between.