One memory-logic-integration design platform is developed in this paper with thermal reliability analysis provided for 2.5D throughsilicon-interposer (TSI) and 3D through-silicon-via (TSV) based integrations. Temperature-dependent delay and power models have been developed at microarchitecture level for 2.5D and 3D integrations of many-core microprocessors and main memory, respectively. Experiments are performed by general-purpose benchmarks from SPEC CPU2006 and also cloud-oriented benchmarks from Phoenix with the following observations. The memory-logic integration by 3D RC-interconnected TSV I/Os can result in thermal runaway failures due to strong electricalthermal couplings. On the other hand, the one by 2.5D transmission-lineinterconnected TSI I/Os has shown almost the same energy efficiency and better thermal resilience.

A robust physical design of 3-D IC requires investigation on through-silicon via (TSV). The large temperatures and stress gradients can severely affect TSV delay with large variation. The traditional physical model treats TSV as a resistor with linear electrical-thermal dependence, which ignores the fundamental device physics. In this paper, a physics-based electricalthermal-mechanical delay model is developed for signal TSVs in 3-D IC. With consideration of liner material and also stress, a nonlinear model is established between electrical delay with temperature and stress. Moreover, sensitivity analysis is performed to relate the reduction of temperature and stress gradients with respect to dummy TSVs insertion. Taking the design of 3-D clock tree as a case study, we have formulated a nonlinear optimization problem for clock-skew reduction. By allocating dummy TSVs to reduce the temperature and stress gradients, the clock skew introduced by signal TSVs and drivers can be minimized. A number of 3-D clock-tree benchmarks are utilized in experiments. We have observed that with the use of dummy TSV insertion, clock skew can be reduced by 61.3% on average when the accurate nonlinear electrical-thermal-mechanical delay model is applied.

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One memory-logic-integration design platform is developed in this paper with thermal reliability analysis provided for 2.5D throughsilicon-interposer (TSI) and 3D through-silicon-via (TSV) based integrations. Temperature-dependent delay and power models have been developed at microarchitecture level for 2.5D and 3D integrations of many-core microprocessors and main memory, respectively. Experiments are performed by general-purpose benchmarks from SPEC CPU2006 and also cloud-oriented benchmarks from Phoenix with the following observations. The memory-logic integration by 3D RC-interconnected TSV I/Os can result in thermal runaway failures due to strong electricalthermal couplings. On the other hand, the one by 2.5D transmission-lineinterconnected TSI I/Os has shown almost the same energy efficiency and better thermal resilience.

No abstract