Searching for new particles beyond the standard model is crucial for understanding several fundamental conundrums in physics and astrophysics. Several hypothetical particles can mediate exotic spin-dependent interactions between ordinary fermions, which enable laboratory searches via the detection of the interactions. Most laboratory searches utilize a macroscopic source and detector, thus allowing the detection of interactions with submillimeter force range and above. It remains a challenge to detect the interactions at shorter force ranges. Here we propose and demonstrate that a near-surface nitrogen-vacancy center in diamond can be utilized as a quantum sensor to detect the monopole–dipole interaction between an electron spin and nucleons. Our result sets a constraint for the electron–nucleon coupling, , with the force range 0.1–23 μm. The obtained upper bound of the coupling at 20 μm is  < 6.24 × 10−15.

The in situ measurement of the distribution of biomolecules inside a cell is one of the important goals in life science. Among various imaging techniques, magnetic imaging (MI) based on the nitrogen-vacancy (NV) center in diamond provides a powerful tool for the biomolecular research, while the nanometer-scale MI of intracellular proteins remains a challenge. Here, we use ferritin as a demonstration to realize the MI of endogenous proteins in a single cell using the NV center as the sensor. With the scanning, intracellular ferritins are imaged with a spatial resolution of ca. 10 nm, and ferritin-containing organelles are colocalized by correlative MI and electron microscopy. The approach paves the way for nanoscale MI of intracellular proteins.

Spin-torque memristors are proposed in 2009, and can provide fast, low-power, and infinite memristive behavior for neuromorphic computing and large-density non-volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current-induced switching in a single device pose difficulties in physical implementation. Here, a nanoscale spin-torque memristor based on a perpendicular-anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure is experimentally demonstrated. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin-transfer torque switching. Memristive states are retained by strong domain wall pinning effects in the free layer. Experiments and simulations suggest that nanoscale vertical chiral spin textures can form around clusters of W atoms under the combined effect of opposite Dzyaloshinskii-Moriya interactions and the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeB free layers. Energy fluctuation caused by these textures may be the main reason for the strong pinning effect. With the experimentally demonstrated memristive behavior and spike-timing-dependent plasticity, a spiking neural network to perform handwritten pattern recognition in an unsupervised manner is simulated. Due to advantages such as long endurance and high speed, the spin-torque memristors are competitive in the future applications for neuromorphic computing.