X-Ray diffraction measurements of lattice parameter were performed for (111) and (100) oriented 3C-SiC/Si epiwafers. Strain of 3C-SiC epilayer and Si substrate were estimated and the result was compared with routine wafer deformation measurements. An unexpected discrepancy was observed between XRD and curvature measurements for (100) oriented samples.

Experimental results presented in this contribution demonstrate that adding HCl to the SiC CVD process is not only an efficient way to suppress the Aluminum memory effect but may also be considered as a powerful tool for fine tuning of intentional Al incorporation in 3C-SiC and 4H-SiC thin films. The approach is easy to implement and seems more reliable than changing TMA bubbling/dilution parameters during the growth. An ad-hoc phenomenological model is proposed to explain the correlation between the HCl supply and Al incorporation.

The present experimental study demonstrates the feasibility of Vanadium doping of 3CSiC hetero-epitaxial material. Some of Vanadium incorporation trends as well as the influence of Vanadium doping on 3C-SiC resistivity are observed.