Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally spin Hall effect in graphene induced by MoS2 proximity and for varying temperature up to room temperature. The fact that spin transport and spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spinto-charge voltage output. Remarkably for a single graphene/MoS2 heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS2. By comparing our results to theoretical calculations, the latter scenario is found the most plausible one. Our findings pave the way towards the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.The efficient transport and the manipulation of spins in the same material are mutually exclusive as they would require simultaneously weak and strong spin-orbit coupling (SOC) respectively. Graphene, due to its low intrinsic SOC, is proven to be an outstanding material that can transport spins over long distance of tens of micrometres 1-10 . For the same reason, the generation and tuning of spin currents in graphene are out of reach, limiting its capability to active spintronic device functionalities and related applications. To solve this issue, methods to artificially induce SOC in graphene have been explored. For instance, the SOC in graphene has been enhanced by chemical doping [11][12][13][14][15][16][17] or by proximity-induced coupling with materials possessing large SOC [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] . The latter method is more convenient since the chemical properties of graphene are not altered, whereas its high-quality electronic transport properties are preserved.Transition metal dichalcogenides (TMDs) with chemical formula MX2 (M=Mo, W and X=S, Se) are layered materials of semiconducting nature displaying unique combined electronic, optical, spintronic and valleytronic properties [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50] . They possess a strong intrinsic SOC of tens of meV, few orders larger than that of pristine graphene 36,37 . Accordingly, a large intrinsic spin Hall effect (SHE) has been theoretically predicted in TMDs 38 . However, its experimental observation remains elusive because of the technical difficulties to inject and detect spin information into these materials 49,50 . Only recently, a spin-orbit torque experim...

Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long distances. However, such outstanding transport properties also limit the capability to engineer active spintronics, where strong spin-orbit coupling is crucial for creating and manipulating spin currents. To this end, transition metal dichalcogenides, which have larger spin-orbit coupling and good interface matching, appear to be highly complementary materials for enhancing the spin-dependent features of graphene while maintaining its superior charge transport properties. In this review, we present the theoretical framework and the experiments performed to detect and characterize the spin-orbit coupling and spin currents in graphene/transition metal dichalcogenide heterostructures. Specifically, we will concentrate on recent measurements of Hanle precession, weak antilocalization and the spin Hall effect, and provide a comprehensive theoretical description of the interconnection between these phenomena.

Engineering two-dimensional material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The perpendicular magnetic anisotropy of Cr2Ge2Te6 results in significant modification of the spin transport and precession in graphene, which can be ascribed to the proximity-induced exchange interaction. Furthermore, the observation of a larger lifetime for perpendicular spins in comparison to the in-plane counterpart suggests the creation of a proximity-induced anisotropic spin texture in graphene. Our experimental results and density functional theory calculations open up opportunities for the realization of proximity-induced magnetic interactions and spin filters in 2D material heterostructures and can form the basic building blocks for future spintronic and topological quantum devices.