The zero temperature coefficient (ZTC) is investigated by three-dimensional numerical simulations in the Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (MOSFET) with the ellipsoidal (EM) and conventional rectangular gate geometries (CM), considering the same channel widths (W), gate areas (Ag) and bias condition (BC).   In this work an improved simple model which predicts the ZTC point taking into account only the mobility degradation factor (c) and threshold voltage (Vth) parameters as function of temperature is proposed in the linear and saturation operation regions. The analysis takes into account the temperature variations of the threshold voltage and the mobility degradation factor. Although simple, the model predictions present a good agreement with the numerical simulations results.

No abstract

No abstract