Single-walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near-infrared, electrically-driven, classical or nonclassical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single-tubes is challenging and heavily influenced by device fabrication, architecture and biasing conditions. Here we present electroluminescence spectroscopy data of ultra-short channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing and no quenching is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibits cold emission and linewidths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the linewidth, absence of intensity saturation and exciton-exciton annihilation, environmental effects like dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions. Supporting InformationContent: Data on the high bias dependence of excitonic emission (Fig. S1), electrical biasing and power dissipation versus light emission from excitons and trions in a hole-doped (9,8)-device ( Fig. S2), impact of annealing on transconductance curve (Fig. S3), and measurements and simulations regarding the electroluminescence detection efficiency of the setup.

Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires precise characterization of SESAM parameters. Here, we present two SESAM characterization setups for a wavelength range of 1.9 to 3 µm to precisely measure both nonlinear reflectivity and time-resolved recovery dynamics. For the nonlinear reflectivity measurement, a high accuracy (<0.04%) over a wide fluence range (0.1–1500 µJ/cm2) is achieved. Time-resolved pump-probe measurements have a resolution of about 100 fs and a scan range of up to 680 ps. Using the two setups, we have fully characterized three different GaSb-SESAMs at an operation wavelength of 2.05 µm fabricated in the FIRST lab at ETH Zurich. The results show excellent performance suitable for modelocking diode-pumped solid-state and semiconductor disk lasers. We have measured saturation fluences of around 4 µJ/cm2, modulation depths varying from 1% to 2.4%, low non-saturable losses (∼ 0.2%) and sufficiently fast recovery times (< 32 ps). The predicted influence of Auger recombination in the GaSb material system is also investigated.

We present the detailed growth and characterization of novel GaSb-based semiconductor saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These SESAMs at different wavelengths are bandgap engineered using ternary material compositions and without strain compensation. We observe that even when the thickness of quantum wells (QWs) exceeds the critical thickness we obtain strain relaxed SESAMs that do not substantially increase nonsaturable losses. SESAMs have been fabricated using molecular beam epitaxy with a AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) and strained type-I InxGa1-xSb or type-II W-like AlSb/InAs/GaSb QWs in the absorber region. All the type-I SESAMs show excellent performance, which is suitable for modelocking of diode-pumped semiconductor, ion-doped solid-state, and thin-disk lasers. The recovery time of the type-II SESAM is too long which can be interesting for laser applications. The dependence of the SESAM design, based on its QW number, barrier material, and operation wavelength are investigated. A detailed characterization is conducted to draw conclusions from macroscopic nonlinear and transient absorption properties at different wavelengths in the 2–2.4 µm range for the corresponding devices.

Femtosecond lasers with high peak power at wavelengths above 2 µm are of high interest for generating mid-infrared (mid-IR) broadband coherent light for spectroscopic applications. Cr2+-doped ZnS/ZnSe solid-state lasers are uniquely suited since they provide an ultra-broad bandwidth in combination with watt-level average power. To date, the semiconductor saturable absorber mirror (SESAM) mode-locked Cr:ZnS(e) lasers have been severely limited in power due to the lack of suitable 2.4-µm SESAMs. For the first time, we develop novel high-performance 2.4-µm type-I and type-II SESAMs, and thereby obtain state-of-the-art mode-locking performance. The type-I InGaSb/GaSb SESAM demonstrates a low non-saturable loss (0.8%) and an ultrafast recovery time (1.9 ps). By incorporating this SESAM in a 250-MHz Cr:ZnS laser cavity, we demonstrate fundamental mode-locking at 2.37 µm with 0.8 W average power and 79-fs pulse duration. This corresponds to a peak power of 39 kW, which is the highest so far for any saturable absorber mode-locked Cr:ZnS(e) oscillator. In the same laser cavity, we could also generate 120-fs pulses at a record high average power of 1 W. A comparable laser performance is achieved using type-II InAs/GaSb SESAM as well. These results pave the way towards a new class of high-power femtosecond SESAM mode-locked oscillators operating directly above 2-µm wavelength.