The paper presents a novel, unified technique to evaluate, through physics-based modeling, the frequency conversion and noise behavior of semiconductor devices operating in large-signal periodic regime. Starting from the harmonic balance (HB) solution of the spatially discretized physics-based model under (quasi) periodic forced operation, frequency conversion at the device ports in the presence of additional input tones is simulated by application of the small-signal large-signal network approach to the model. Noise analysis under large-signal operation readily follows as a direct extension of classical approaches by application of the frequency conversion principle to the modulated microscopic noise sources and to the propagation of these to the external device terminals through a Green's function technique. An efficient numerical implementation is discussed within the framework of a drift-diffusion model and some examples are finally provided on the conversion and noise behavior of rf Si diodes.

In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency and/or linearity, where analog and digital techniques are exploited. Another important trend is the bandwidth enlargement of the Doherty architecture, that involves a large number of papers. Multi-band, multi-mode solutions are also considered, using either fixed or reconfigurable solutions. The final section is dedicated to the most significant Doherty integrated implementations.Index Terms-Doherty power amplifier, gallium arsenide, gallium nitride, linearization, wireless communications.

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This paper presents an innovative approach to extend the -parameter definition to multiport networks having conventional single-ended and differential ports, as is the case for operational amplifiers, transformers and baluns. To give maximum generality to this technique, for example, allowing for complex -parameter reference impedances, the mathematical derivation will be carried out with the most general definition of the -parameters. The presented approach gives the same results already published for circuits with differential ports only when the required simplifications are applied.

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3-3.6 GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT, and shows, at 6 dB of output power back-off, a drain efficiency higher than 38 % in the 3-3.6 GHz band, gain around 10 dB, and maximum power between 43 dBm and 44 dBm, with saturated efficiency between 55 % and 66 %. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10 W (Class A) GaN HEMT is excellent over the amplifier band.