Phonons provide information on the physicochemical properties of a crystalline lattice from the material's vibrational spectrum. Optical phonons, in particular, can be probed at both micrometre and nanometre scales using light-based techniques, such as, micro-Raman and tip-enhanced Raman spectroscopy (TERS), respectively. Selection rules, however, govern the accessibility of the phonons and, hence, the information that can be extracted about the sample. Herein, we simultaneously observe both allowed and forbidden optical phonon modes of defect-free areas in monolayer graphene to study nanometre scale strain variations and plasmonic activation of the Raman peaks, respectively, using our home-built TERS system in ambient. Through TERS imaging, strain variations and nanometre-sized domains down to 5 nm were visualised with a spatial resolution of 0.7 nm. Moreover, such subnanometric confinement was found to activate not only the D and D' forbidden phonon modes but also their D + D' combination mode. With our TERS in ambient system, the full phonon characterisation of defect-free graphene and other 2D nanomaterials is now possible, which will be useful for subnanometre strain analysis and exploring the inherent properties of defect-free materials.

Local temperature of a nanoscale volume is precisely determined by tip-enhanced terahertz Raman spectroscopy in the low temperature range of several tens of degrees. Heat generated by the tip-enhanced electric field is directly transferred to single-walled carbon nanotubes by heat conduction and radiation at the nanoscale. This heating modulates the intensity ratio of anti-Stokes/Stokes Raman scattering of the radial breathing mode of the carbon nanotube based on the Boltzmann distribution at elevated temperatures. Owing to the low-energy feature of the radial breathing mode, the local temperature of the probing volume has been successfully extracted with high sensitivity. The dependence of the temperature rise underneath the tip apex on the incident power coincides with the analytical results calculated by finite element method based on the tip enhancement effect and the consequent steady-state temperature via Joule heat generation. The results show that the local temperature at the nanoscale can be controlled in the low temperature range simply by the incident laser power while exhibiting a sufficiently high tip enhancement effect as an analytical tool for thermally sensitive materials (e.g., proteins, DNA). Graphical Abstract Tip-enhanced THz Raman spectroscopy detects the low frequency Raman mode both in Stokes and anti-Stokes shifts, which precisely reflects the local temperature of the sample volume.

Strain nano-engineering provides valuable opportunities to create high-performance nanodevices by a precise tailoring of semiconductor band structure. Achieving these enhanced capabilities has sparked a surge of interest in controlling strain on the nanoscale. In this work, the stress behavior in ultrathin strained silicon nanowires directly on oxide is elucidated using backgroundfree, high-resolution polarized Raman spectroscopy. We established a theoretical framework to quantify the stress from Raman shifts taking into account the anisotropy associated with the nanowire quasi-one-dimensional morphology. The investigated nanowires have lateral dimensions of 30, 50 and 80 nm and a length of 1 µm top-down fabricated by patterning and etching 15 nm thick biaxially tensile strained silicon nanomembranes generated using heteroepitaxy 5