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We demonstrate and review the unique fine-pitch high-aspect ratio tungsten-filled through-silicon vias (W-TSVs) technology developed by Fraunhofer EMFT in high-resitivity silicon substrates. The proposed process flow is fully compatible with both CMOS and MEMS technology, allowing 3D heterogeneous integration of highperformance, low power, compact tunable RF front-ends. We have assessed the figures of merit of the technology for RF functionality by fabricating and characterizing different configurations for CPWs with TSV transitions, mm-wave antennas and LC resonators as well as record-high performance wideband out-of-plane micro-inductors

This paper reports the design and characterization of partially-filled-gap capacitive MEMS resonators for distributed mass sensing applications. By filling the gap with HfO2, the coupling coefficient between electrode-resonator increases by ×6.67 times and the motional resistance decreases by ×12 times in comparison with its counterpart in air. An improvement by a factor of ×5.6 in the Signal-To-Noise Ratio (SNR) for DC bias up to ×2.8 lower is accomplished by performing a piezoresistive detection instead of capacitive detection. Quality factor (Q) of 11,350 and motional resistances (Rm) of 926 Ω have been achieved for Parallel Beam Resonators (PBR) vibrating at 22.231 MHz. For the first time, ALD HfO2 partially-filled-gap MEMS resonators are proven to achieve inertial distributed mass sensitivities of the order of 4.28 kHz/pg for beam-type and 1.8k Hz/pg for disk resonators.

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