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Articles you may be interested inHigh operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices Appl. Phys. Lett. 98, 143501 (2011); 10.1063/1.3573867 High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 95, 4084 (2004); 10.1063/1.1686898 Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivityHigh-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers A series of proton irradiations has been carried out on p-n silicon photodiodes for the purpose of assessing the suitability of these devices for the European Galileo space mission. The irradiations were performed at energies of 60, 100, and 150 MeV with proton fluences ranging from 1.7 ϫ 10 10 to 1 ϫ 10 11 protons/ cm 2 . Dark current, spectral responsivity, and dark current noise were measured before and after each irradiation step. We observed an increase in both dark current, dark current noise, and noise equivalent power and a drop of the spectral responsivity with increasing displacement damage dose. An analytical model has been developed to investigate proton damage effects through the modeling of the electro-optical characteristics of the photodiode. Experimental degradations were successfully explained taking into account the degradation of the minority carrier diffusion length in the N-region of the photodiode. The degradation model was then applied to assess the end-of-life performance of these devices in the framework of the Galileo mission.

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