The development of silicon‐based radiative nanostructures is an important step toward silicon‐based optoelectronic systems. Here an approach for the fabrication of photoluminescent Er‐doped silicon nanoantennas is demonstrated. The combination of electron beam lithography and laser annealing of a thin Er film deposited after fabrication creates an active dielectric nanoantenna operating in the standard telecommunication wavelength range (C‐band). Using the multipole decomposition method the geometrical parameters of the silicon nanoparticle when the first‐order Mie‐resonances are tuned to the erbium emission in C‐band range (4I13/2→4I15/2$^4I_{13/2}\rightarrow ^4I_{15/2}$ transition) is calculated. It is observed experimentally that the presence of the Mie‐resonances provides enhancement of the photoluminescence intensity up to 40% compared to the non‐resonant case. The proposed approach allows for the creation of computational optical chips compatible with existing nanofabrication technologies.

Developing active dielectric systems is in high demand due to growing the internet of things. Such systems can control the optical properties of nanoemitters which leads to an increase in the performance of the telecommunication networks. Here we numerically investigate metasurface consists of all-dielectric erbium-doped silicon nanocylinders. We demonstrate that such a structure can effectively control and enhance 320-folds spontaneous emission in the near-IR wavelength range. The results of this paper can be used for creating new telecommunication systems.

No abstract