Abstract. Laser-induced periodic surface structures are created on Si (100) and Si (111) wafers by 500 fs laser pulses at 248 nm. The periodic structure is concentric and highly regular. The spatial period is consistently varying between 1.1 μm and 3.3 μm in the radial direction. It is shown that the fluence of the irradiation at the same pulse number determines the size of the area where the periodic structure is created and for the same fluence the pulse number determines the regularity of the created grooves by melting processes. The origin of this structure is identified as the inhomogeneity of the laser beam profile caused by Fresnel diffraction close to the focal plane. Further improvement of the formation of periodic structure with femtosecond laser pulses is suggested.