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Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C(82), Gd@C(82), and Ce@C(82). We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C(82) and Ce@C(82) junctions. The conductance, on the other hand, remains comparable for all three systems. The power factor determined for the Gd@C(82) based junction is so far the highest obtained for a single-molecule device. Although the encapsulated metal atom does not directly contribute to the transport, we show that the observed enhancement of the thermopower for Gd@C(82) and Ce@C(82) is elucidated by the substantial changes in the electronic- and geometrical structure of the fullerene molecule induced by the encapsulated metal atom.

The thermal transport properties of teflon (polytetrafluoroethylene) and its polyethylene counterparts are, while highly desirable and widely used, only superficially understood. Here, we aim therefore to provide rigorous insight from an atomistic point of view in context of single-molecule devices. We show that for vinyl polymers adsorbed on metal-surfaces the thermal transport strongly depends on the properties of the metal-molecule interface and that the reduced thermal conductance observed for teflon derivatives originates in a reduced phonon injection life time. In asymmetric molecules phonon blocking on the intra molecular interface leads to a further reduction of thermal conductance. For hetrojunctions with different electrode materials we find that thermal conductance is suppressed due to a reduced overlap of the available phonon modes in the different electrodes. A detailed atomistic picture is thereby provided by studying the transport through perfluorooctane and octane on a single-molecule level using first principles transport calculations and nonequilibrium molecular dynamic simulations.

The knowledge of band edges in nanocrystals (NCs) and quantum-confined systems is important for band alignment in technologically significant applications such as water purification, decomposition of organic compounds, water splitting, and solar cells. While the band energy diagram of bulk silicon carbides (SiCs) has been studied extensively for decades, very little is known about its evolution in SiC NCs. Moreover, the interplay between quantum confinement and surface chemistry gives rise to unusual electronic properties and remains barely understood. Here, we report for the first time the complete band energy diagram of SiC NCs synthesized such that they span the regime from strong to intermediate to weak quantum confinement. The absolute positions of the highest occupied (HOMO) and lowest unoccupied (LUMO) molecular orbitals show clear size dependence. While the HOMO level follows the expected behavior for quantum-confined electronic states, the LUMO energy shifts below the bulk conduction band minimum, which cannot be explained by a simple quantum confinement caused by the size effect. We show that this effect is a result of the interplay between quantum confinement and the formation of surface states due to partial and site-selective oxygen passivation.