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A new theoretical model for the dielectrophoretic (DEP) fabrication of single-walled carbon nanotubes (SWCNTs) is presented. A different frequency interval for the alignment of wide-energy-gap semiconductor SWCNTs is obtained, exhibiting a considerable difference from the prevalent model. Two specific models are study, namely the spherical model and the ellipsoid model, to estimate the frequency interval. Then, the DEP process is performed and the obtained frequencies (from the spherical and ellipsoid models) are used to align the SWCNTs. These empirical results confirm the theoretical predictions, representing a crucial step towards the realization of carbon nanotube field-effect transistors (CNT-FETs) via the DEP process based on the ellipsoid model.

In this paper, we present a new theoretical model for the dielectrophoresis (DEP) process of the single-walled Carbon nanotubes (SWCNT). We obtain a different frequency interval for the alignment of wide energy gap semiconductor SWCNTs which shows a considerable difference with the prevalent model. For this, we study two specific models namely, the spherical model and the ellipsoid model to estimate the frequency interval. Then, we perform the DEP process and use the obtained frequencies (of spherical and ellipsoid models) for the alignment of the SWCNTs. Our empirical results declare the theoretical prediction, i.e., a crucial step toward the realization of carbon nanotube fieldeffect transistor (CNT-FET) with the DEP process based on the ellipsoid model.