The photodissociation dynamics of some alkali halides are explored via the method of femtosecond transition-state spectroscopy (FTS). The alkali halide dissociation reaction is influenced by the interaction between the covalent and the ground state ionic potential energy surfaces (PES), which cross at a certain internuclear separation. Depending upon the adiabaticity of the PES, the dissociating fragments may be trapped in a well formed by the avoided crossing of these surfaces. Here, we detail the FTS results of this class of reactions, with particular focus on the reaction of sodium iodide: NaI*→[Na---I]°* →Na+I. As in our first report [T. S. Rose, M. J. Rosker, and A. H. Zewail, J. Chem. Phys. 88, 6672 (1988)], we observe the dynamical motion of the wave packet along the reaction coordinate and the crossing between the covalent and ionic surfaces. The studies presented here characterize the effects of various experimental parameters, including pump and probe wavelengths, on the dynamics of the dissociation and its detection. Comparisons of the results with classical and quantum mechanical calculations are also presented.
The closely related phases alpha- and beta-A(2)Hg(3)M(2)S(8) (A = K, Rb; M = Ge, Sn) have been discovered using the alkali polychalcogenide flux method and are described in detail. They present new structure types with a polar noncentrosymmetric crystallographic motif and strong nonlinear second-harmonic generation (SHG) properties. The alpha-allotropic form crystallizes in the orthorhombic space group Aba2 with a = 19.082(2) A, b = 9.551(1) A, c = 8.2871(8) A for the K(2)Hg(3)Ge(2)S(8) analogue, and a = 19.563(2) A, b = 9.853(1) A, c = 8.467(1) A for the K(2)Hg(3)Sn(2)S(8) analogue. The beta-form crystallizes in the monoclinic space group C2 with a = 9.5948(7) A, b = 8.3608(6) A, c = 9.6638(7) A, beta = 94.637 degrees for the K(2)Hg(3)Ge(2)S(8) analogue. The thermal stability and optical and spectroscopic properties of these compounds are reported along with detailed solubility and crystal growth studies of the alpha-Kappa(2)Hg(3)Ge(2)S(8) in K(2)S(8) flux. These materials are wide gap semiconductors with band gaps at approximately 2.40 and approximately 2.64 eV for the Sn and Ge analogues, respectively. Below the band gap the materials exhibit a very wide transmission range to electromagnetic radiation up to approximately 14 microm. alpha-K(2)Hg(3)Ge(2)S(8) shows anisotropic thermal expansion coefficients. SHG measurements, performed with a direct phase-matched method, showed very high nonlinear coefficient d(eff) for beta-K(2)Hg(3)Ge(2)S(8) approaching 20 pm/V. Crystals of K(2)Hg(3)Ge(2)S(8) are robust to air exposure and have a high laser-damage threshold.
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