In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C-700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

In this paper, SiGe nano-pillars coalescence was investigated using a 300 mm industrial Reduced Pressure-Chemical Vapor Deposition tool. An integration scheme based on diblock copolymer patterning provided nanometer size templates for the selective epitaxy of SiGe 25% nano-pillars. In order to study coalescence, thicknesses ranging from 20 to 35 nm were grown and samples characterized by Atomic Force Microscopy, X-Ray Diffraction, Scanning Spreading Resistance Microscopy and Transmission Electron Microscopy. The evolution in terms of grain shape, size and number was examined, with individual pillars merging into larger grains above 30 nm thickness. High degrees of macroscopic strain relaxation were obtained at the different stages of nano-pillars merging. Defects such as stacking faults and twins were identified as occurring at the early stages of nano-pillar coalescence.

In this paper, SiGe nano-pillars coalescence was investigated using a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. An integration scheme based on diblock copolymer patterning provided nanometer size templates for the selective epitaxy of SiGe 25% nano-pillars. In order to study merging, thicknesses ranging from 20 to 35 nm were grown and samples characterized by AFM, XRD, SSRM and TEM. The evolution in terms of grains shape, size and number was examined, with individual pillars merging into larger grains above 30 nm thickness. High degrees of macroscopic strain relaxation were obtained at the different stages of nano-pillars merging. Defects such as stacking faults and twins were identified as occurring at the early stages of nano-pillar coalescence.

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