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This paper studies the challenges and beh material between the silicon (Si) material a Ni/Pd/Au-Ag alloy-plated Copper (Cu) leadfra µPPF) with anti-epoxy bleed-out (EBO) du process. Die bond on die attach paddle (DAP µPPF using Silver (Ag)-based epoxy has been its manufacturability in terms of maintaining th fillet height for a 300 µm Si chip thickness. Th roughened µPPF utilizing die bond parameter epoxy on standard Ag-plated DAP Cu leadfram height greater than the maximum target limit thickness and reaching as high as 100% fille occurrence leads to risks of epoxy component the chip surface which is detrimental (delamination on die top) and can cause manu loss due to die contamination and non-stick o during wire bonding. The processability of the surface of the roughened µPPF leadframe established due to this significant difference result when compared to the Ag-plated Cu le has a major impact in the quality of the chip development of the die bond process for the ro is separated into two assessments, namely e scale assessment and die bond paramet experiment (DoE). The epoxy dispense sca studies the optimum epoxy glue coverage with area that will ensure a consistent epoxy volu the Si chip (bond line thickness or BLT) an linear epoxy fillet height formation along the sid chip. Once the optimum dispense scale is e DoE, the critical die bond parameters identif window where a controlled fillet height is ob any impact on the functionality test response The study shows that a high epoxy dispen optimum die bond parameter, namely, compon distance and dispensing height are required optimum epoxy fillet height control along the s Si chip.