Half-Heuslers (HHs) are promising thermoelectric materials with great compositional flexibility. Here, we extend work on the p-type doping of TiCoSb using abundant elements. Ti0.7V0.3Co0.85Fe0.15Sb0.7Sn0.3 samples with nominal 17.85 p-type electron count were investigated. Samples prepared using powder metallurgy have negative Seebeck values, S ≤ −120 µV K−1, while arc-melted compositions are compensated semiconductors with S = −45 to +30 µV K−1. The difference in thermoelectric response is caused by variations in the degree of segregation of V(Co0.6Fe0.4)2Sn full-Heusler and Sn phases, which selectively absorb V, Fe, and Sn. The segregated microstructure leads to reduced lattice thermal conductivities, κlat = 4.5−7 W m−1 K−1 near room temperature. The largest power factor, S2/ρ = 0.4 mW m−1 K−2 and ZT = 0.06, is observed for the n-type samples at 800 K. This works extends knowledge regarding suitable p-type dopants for TiCoSb.
The use of two-dimensional materials in bulk functional applications requires the ability to fabricate defect-free 2D sheets with large aspect ratios. Despite huge research efforts, current bulk exfoliation methods require a compromise between the quality of the final flakes and their lateral size, restricting the effectiveness of the product. In this work, we describe an intercalation-assisted exfoliation route, which allows the production of high-quality graphene, hexagonal boron nitride, and molybdenum disulfide 2D sheets with average aspect ratios 30 times larger than that obtained via conventional liquid-phase exfoliation. The combination of chlorosulfuric acid intercalation with in situ pyrene sulfonate functionalisation produces a suspension of thin large-area flakes, which are stable in various polar solvents. The described method is simple and requires no special laboratory conditions. We demonstrate that these suspensions can be used for fabrication of laminates and coatings with electrical properties suitable for a number of real-life applications.
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