A large-planar (22 cm diam.) high-density ( ∼2×1012 cm-3) plasma is produced in argon gas at 140 Pa by 2.45 GHz–1 kW discharges, using a microwave launcher of small slot antennas. The two-dimensional distributions of optical emission intensities as well as microwave field intensities are measured near the plasma surface irradiated with microwaves. Both the optical emission and the microwave field clearly show stationary patterns of azimuthal mode m=3 and radial mode n=3 at higher pressures (140 Pa), while a mode change to m=6 and n=2 is observed at lower pressures (44 Pa). These patterns are attributed to the excitation and absorption of standing surface waves near the cutoff layer.

A planar high-density (∼10 12 cm −3 ) plasma, 22 cm in diameter and 9 cm in length, is produced by a 2.45 GHz microwave radiation of 500 W through small slot antennas in argon at 20-350 Pa without a magnetic field. Several types of azimuthal and radial standing wave mode pattern are observed in the optical emission from the plasma depending on the discharge conditions. The microwave field in the plasma measured by a movable antenna decreases exponentially in the axial direction from the quartz wall adjacent to the slot antennas, thus suggesting the propagation of surface waves in the r, θ directions. The measured azimuthal microwave field distributions and the optical emission pattern clearly show a mode transition of the standing surface wave from a TM 33 mode to a TM 62 mode when the pressure is decreased from 140 to 44 Pa at the constant power of 400 W. Here TM mn denotes the transverse magnetic mode of azimuthal mode number m and radial mode number n. A wave dispersion analysis based on a one-interface uniform-density model predicts these modes in a range of electron densities corresponding to those measured by a Langmuir probe in the experiment.

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For the practical application of end-point detection of etching using plasma-impedance monitoring, the factors determining the impedance were clarified using an electric circuit model of a reaction chamber. In the model, plasma is approximated by a conductor, and the floating capacitance and wafer of a powered electrode, as well as the powered-electrode sheath (the sheath formed between the plasma and powered electrode), are approximated by capacitors. Calculated values obtained using the model agree well with measured values obtained by an impedance monitor installed between the powered electrode and the matching network. Based on this result, it was inferred that the impedance depends on the powered-electrode sheath-voltage and electron density, as well as on the floating capacitance and area of the powered electrode, the dielectric constant and thickness of the wafer, and the electron temperature. Next, the end-point detection method of etching by impedance monitoring was applied to reactive ion etching of SiO2 films, and the following finding was confirmed: the change in the impedance significantly depends on the RF power and the exposed area ratio (the ratio of etched area to wafer area) on the wafer. In addition, the feasibility of detecting the point of change of the exposed area ratio on the wafer, where the area size varies during etching, by detecting microchanges in the impedance, was demonstrated. As a result, the possibility of highly accurate end-point detection of etching by impedance monitoring was confirmed.

An inductively coupled plasma source with an internal straight antenna was developed. By inserting an antenna into plasma, the induction of a strong electric field in the plasma and the efficient transmissions of power to plasma is enabled. However, there was a practical problem in that antenna sputtering occurred. Suppression of antenna sputtering and methods of insulating the antenna were studied. Consequently, it was found that sputtering impurities were reduced by covering the straight antenna with a quartz pipe. Furthermore, the amount of quartz pipe etching could be reduced to as little as 1/10th the original value. As a result of fabricating and evaluating the plasma source in which four straight antennas were arranged in parallel, electron density was determined to be as high as 1011 cm-3 even at a pressure as low as 4 mTorr. When the processing performance of the plasma source was evaluated, the ashing rate of the photoresist and the etching rate of the poly-Si were, respectively, 4.8 µm/min and 450 nm/min. These values are at practically applicable levels.