No abstract

We propose a new p-down inverted avalanche photodiode (APD) structure suitable for a scaled APD with smaller junctions. The inverted APD structure has an edge-field buffer layer to prevent undesirable edge breakdown and suppress the excess surface leakage current associated with the InGaAs mesa surface. The fabricated back-illuminated InAlAs/InGaAs APDs show excellent multiplication characteristics without edge breakdown. An f 3dB of 27 GHz and a GB product of 220 GHz are obtained for these APDs. #

We demonstrate an integrated 100 GbE receiver optical sub-assembly (ROSA) that incorporates a monolithic four-channel avalanche photodiode (APD) array and a planer lightwave circuit (PLC) based LAN-WDM demultiplexer. A record minimum receiver sensitivity of -20 dBm and 50-km error-free SMF transmission without an optical amplifier have been achieved.

Avalanche photodiodes (APDs), i.e., semiconductor devices, which convert and amplify optical signals into electrical signals, are used for optical communications and for imaging and medical applications. The major requirements for APDs in optical communications are high-speed operation for high data rates and high-sensitivity operation for extending the transmission reach. This paper overviews the achievements of high-speed APDs for 100-Gbit/s optical communications, focusing on III-V material systems, which are advantageous in terms of band engineering. The outlook for APDs in future optical communications is also described.

No abstract