The ground and excited states of Sb atom in Si, 1s (A 1 ), 1s (T 2 ), 1s (E), and 2p 0 , were measured by using a traveling-wave method. The Sb-doped Si crystal with donor concentration of 2 Â 10 15 cm À3 was placed the distance of 5 lm above a piezoelectric crystal in the fringe field of a surface acoustic wave. The free electrons excited from the bound states of the Sb atom are drifted by the traveling-wave, and thus lose their energy as the Joule heat through lattice and ion scattering processes. A strong temperature-dependent energy loss of the traveling-wave can be observed at temperatures below 200 K. The values of the bound states of the Sb atom can be characterized by using the Arrhenius plot for thermal activation process of the electrons in the bound states. The measurements were carried out at two frequencies of the traveling-wave, 50 MHz and 200 MHz. At the frequency of 50 MHz, the dielectric properties of the Si crystal are governed by dopant polarization but by electronic polarization at 200 MHz. We found that measurement accuracy of the bound states depends mainly on the electron mobility and the dielectric constant of the Si crystal, which are sensitive to the frequency and strength of the traveling-wave as well as electronic polarization properties of the Si crystal. V C 2012 American Institute of Physics. [http://dx

Electrical properties of the C60(OH)10/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300–500 K. The Schottky barrier of the C60(OH)10/Au contact was confirmed to be 0.70±0.02 eV from Arrhenius plots of the current-voltage characteristics measured at various bias voltages as well as various preparation conditions of the C60(OH)10 material. Significant effect of the applied electric field on the barrier height has not been observed in the range of 0.1–2.0 MVm−1. The effects of both the charge transfer from C60 cage to OH groups and the crystallinity of the C60(OH)10 material on the Schottky barrier were discussed on the basis of x-ray photoemission spectroscopy and x-ray diffraction analyses.

The impurity bands and corresponding ionization energies of nitrogen atoms in a 4H-SiC crystal with a concentration of 1×1019 cm-3 are measured by a nondestructive and noncontact traveling-wave method. When a SiC sample was placed near the surface of a surface acoustic wave device, its conductivity can be obtained by measuring the attenuation of the piezo-potential traveling-wave grazing along the surface of the sample. Temperature-dependent conductivities corresponding to a freeze-out process of free carriers excited from nitrogen atoms were observed, and the corresponding ionization energies of the nitrogen atoms were estimated by the Arrhenius plot method. The ionization energies in the impurity bands originating from splits of the doping atoms at cubic and hexagonal sites in the carbon sublattice are 72.89 and 47.89 meV, respectively, at room temperature. The ionization energies are in good agreement with the results reported in other theoretical and experimental studies. We also found that the skin depth of the traveling wave in the sample is below 1 mm and that the mobility of the carriers is strongly affected by both ionized dopants and charged surface defects in the depletion region near the surface of the sample. The effects of the sample and traveling wave such as the polarization effects of the crystal and the frequency effects of the traveling wave are discussed.

Electrical transport properties of the nanocrystalline Er 3 N@C 80 with fcc crystal structure were characterized by measuring both temperature-dependent d.c. conductance and a.c. impedance. The results showed that the Er 3 N@C 80 sample has characteristics of n-type semiconductor and an electron affinity larger than work function of gold metal. The Er 3 N@C 80 /Au interface has an ohmic contact behavior and the contact resistance was very small as compared with bulk resistance of the Er 3 N@C 80 sample. The charge carriers in the sample were thermally excited from various trapped levels and both acoustic phonon and ionic scatterings become a dominant process in different temperature regions, respectively. At temperatures below 250 K, the activation energy of the trapped carrier was estimated to be 35.5 meV, and the ionic scattering was a dominant mechanism. On the other hand, at temperatures above 350 K, the activation energy was reduced to 15.9 meV, and the acoustic phonon scattering was a dominant mechanism. In addition, a polarization effect from the charge carrier was observed at low frequencies below 2.0 MHz, and the relative intrinsic permittivity of the Er 3 N@C 80 nanocrystalline lattice was estimated to be 4.6 at frequency of 5.0 MHz.

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