In this paper, we demonstrate our STO thin film decoupling capacitor embedded in organic interposer is effective for reduction of resonant power supply noise of LSI. By comparison of Shmoo plots with on-chip MOS capacitor, significant contributions of STO capacitor to higher operable frequency and lower power supply voltage are shown.

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We report the observation that AlSb layers thinner than the epilayer critical thickness for the onset of plastic relaxation undergo lattice relaxation when used as buffers for GaSb/AlSb superlattices on (001) GaSb substrates. It is found that this is induced by the external stress from the overlaying superlattice, and that the mechanism is consistent with relaxation processes involving the nucleation and expansion of half-loops earlier suggested for strained epilayers. Photoluminescence spectroscopy conforms with the in-plane strains calculated from double-crystal and small-angle X-ray diffraction measurements.

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