No abstract

This paper investigate instability in device characteristics related to the hot carrier effect, Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature (PBTI) under DC stress for n-and p-channel thin-film Silicon on Insulator (SOI) power MOSFET at high temperature. The threshold voltage shift increases as the temperature rises due to PBTI for n-MOSFET and NBTI for p-MOSFET. Drain Avalanche Hot Carrier (DAHC) occurs when the gate stress voltage is near the threshold voltage and Channel Hot Carrier (CHC) occurs when the gate voltage is high. The threshold voltage shift and the degradation rate of on-resistance of the n-MOSFET is larger than that of the p-MOSFET due to the difference in the impact ionization coefficient between electrons and holes.

Nano-level 3-D measurement is one of the key technologies for the current and future generation of production systems for semi-conductors, LCDs and nanodevices. To meet with these applications, wide range nanolevel 3-D shape measurement method using combination of RGB lights has been developed. It measures the height of nano-objects using RGB lights interference color fringes. To analyze the RGB color fringes, the adaptive phase analysis method of interference fringes has been developed and achieved its efficiency. But it cannot measure the shape of edges. To meet with the difficulty, the color analysis method on xy-color plane has been introduced. The combination of the phase measurement method and the color analysis method has measured the 4 micrometer columns precisely. As more practical application, the shape of needles for AFM has been extracted, successfully.