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Pseudomorphic In x Ga1-x As/Al0.28Ga0.72As (x = 0.085–0.15) quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A and (100) GaAs substrates at a temperature (T s) of 520°C by molecular beam epitaxy (MBE). The interface flatness of the QWs was characterized by photoluminescence (PL) at 4.2 K. PL linewidths of the narrow (411)A QWs (L w = 2.4 nm) with x = 0.085 and 0.15 were 7.3 meV which is approximately 30–40% smaller than those of the (100) QWs, indicating that extremely flat interfaces over a macroscopic area [(411)A super-flat interfaces] have been realized in the pseudomorphic In x Ga1-x As/Al0.28Ga0.72As QWs (up to x = 0.15) grown on the (411)A GaAs substrates, similar to lattice-matched GaAs/Al x Ga1-x As QWs grown on (411)A GaAs substrate previously reported.

High-quality In x Ga1-x As layers (0.505 ≤x ≤0.545) were grown on (411)A-oriented InP substrates by molecular beam epitaxy (MBE). High-resolution X-ray diffraction (HRXRD) measurements of the (411)A In x Ga1-x As layers showed no relaxation of lattice mismatch, and residual strain components observed in the (411)A InGaAs layers were in good agreement with calculated results based on the constrained pseudomorphic layer model on high index substrates proposed by Yang et al. [Appl. Phys. Lett. 65 (1994) 2789]. Photoluminescence (PL) linewidth of the (411)A InGaAs layer with In content (x) of 0.505 was 1.9 meV at 12 K, which is less than half that (4.0 meV) of an InGaAs layer simultaneously grown on a (100) InP substrate, and almost the same as the optimum value (1.2–3.0 meV) reported for InGaAs layers grown on (100) InP substrates. These results indicate that high-quality InGaAs layers can be easily obtained by MBE growth on (411)A InP substrates.

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