Esta es la versión de autor del artículo publicado en:This is an author produced version of a paper published in: El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription CONSUMER PRIVACY CONCERNS AND PREFERENCE FOR DEGREE OFREGULATORYCONTROL A Study of Mobile Advertising in JapanShintaro Okazaki, Hairong Li, and Morikazu Hirose ABSTRACT: This study explores the consequences of consumers' privacy concerns in the context of mobile advertising. Drawing on social contraer theory, the proposed research model connects a series of psychological factors (prior negative experience, information privacy concerns, perceived ubiquiry, trust, and perceived risk) and preference for degree of regulatory control. Data from a survey of 51O mobile phone users in Japan show that mobile users with prior negative experiences with information disclosure possess elevated privacy concerns and perceive stronger risk, which leads them to prefer stricter regulatory controls in mobile advertising. Both perceived ubiquity and sensitivity of the information request further the negative impact of privacy concerns on trust. No such effect occurs for the impact of privacy concerns on perceived risk, however. The authors discuss sorne theoretical and managerial implications.Consumer privacy concerns with respect to mobile advertising have become an important issue for policymakers, trade groups, and consumer advocates as unfair information practices continue to escalare in many countries. In the United States, unsolicited messages or spam increased by 38% from 2006 to 2007 and was expected to increase by 50% more to l.5 million messages in 2008 (Cloudmark 2008). Sorne spam messages request mobile users to provide personal information, including their credit card numbers, or attempt to infiltrare mobile devices with virus programs by asking users to register for services (CNET.co.uk 2006).To alleviate consumers' concerns about these potential invasions, the mobile industry has implemented several selfregulations. For example, the Mobile Marketing Association recently revised its consumer best practices guidelines, including those regarding promotional content and marketing to children; it also expanded and clarified its guidelines for free, standard, and premium rate messaging, mobile Web, and interactive voice responses ( Despite these different regulatory measures, what makes the most effective type of regulation in terms of protecting consumer information privacy remains a topic of debate. To assess the appropriateness of different approaches, we might examine mobile users' preferences for the degree of regulatory control, because users influence both mobile service providers and regulatory government agencies. Therefore, this research explores the relationship between consumer privacy concerns in mobile advertising and their preference for three types of regulations: government regulation, industry self-regulation, and government and industry coregulation. Government ...

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High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO 2 /Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO 2 /Si͑100͒ and the wet SiO 2 /Si͑100͒ interfaces, respectively. The valence band alignment of dry SiO 2 /Si͑111͒ ͑4.36 eV͒ is slightly smaller than the case of the dry SiO 2 /Si͑100͒ interface. © 1997 American Institute of Physics. ͓S0021-8979͑97͒00203-X͔ Ultralarge scale integration ͑ULSI͒ of metal-oxidesemiconductor ͑MOS͒ devices will need reliable gate oxides thinner than 5.0 nm in the near future. In order to predict the tunneling leakage current through the ultrathin gate oxides, an accurate description of the energy band profile at the ultrathin SiO 2 /Si interfaces or a precise knowledge on the value of the valence band alignment and the conduction band barrier height is required.1 Although the energy band profile of thick SiO 2 /Si interfaces has been determined by an internal photoemission technique, 2 reliable values for the electron or hole barrier height at ultrathin SiO 2 /Si interfaces remain an unresolved issue. Among the various attempts that have been made in the past to gain a comprehensive understanding of the barrier height or the energy band profile for ultrathin SiO 2 /Si interfaces, 3-8 the consistent picture of the energy band profile has not yet been drawn. Horiguchi and Yoshino 3 have reported that the barrier height for SiO 2 /Si͑100͒ decreases when the oxide thickness becomes thinner than 3.1 nm. On the other hand, by using an electron-beam-assisted scanning tunneling microscopy technique, Heike et al. 4 have concluded that the barrier height at the SiO 2 /Si͑100͒ interfaces keeps a constant value of 2.7 eV in the oxide thickness range 1.8-4.5 nm. Grunthaner and Grunthaner 9 have measured valence band spectra of ϳ6-nm-thick SiO 2 thermally grown on Si͑111͒ by using x-ray photoelectron spectroscopy and found the valence band offset of 4.5 eV. Also, Himpsel et al. 10 have obtained a valence band alignment of 4.3 eV for the SiO 2 /Si͑100͒ interface by using the Si 2 p core level spectrum. Thus well established values of the valence band alignment or the barrier height at ultrathin SiO 2 /Si interfaces are not available.The purpose of our study is to directly determine the magnitude of the valence band alignment or the hole barrier height at the ultrathin SiO 2 /Si interface and derive a value for the conduction band barrier height by using a measured SiO 2 band gap, based on the valence band density of states ͑VB-DOS͒ for ultrathin gate oxides ͑below 5.0 nm͒ thermally grown on Si͑100͒ and Si͑111͒ surfaces by employing highresolution x-ray photoelectron spectroscopy ͑XPS͒.Ultrathin gate oxides were grown at 1000°C in a 2% dry O 2 gas diluted with N 2 or at 850°C in wet ambient. Hydrogen-terminated p-type Si͑100͒ substrates ͑10 ⍀ cm͒ were obtained by modified RCA cleaning with a low concentration of NH 4 OH followed by a chemical...

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