We performed measurements of a series of adsorption–desorption isotherms of nitrogen into MCM-41 and SBA-15 mesoporous molecular sieves with different pore sizes in a wide temperature range between a bulk triple point (Tt) and a bulk critical point (Tc). The hysteresis loop shrinks with increasing temperature and eventually disappears at the hysteresis critical temperature (Tch), in accord with the appearance of metastable states in a single pore. We estimated the exact pore sizes of our samples from comparing the experimental equilibrium pressure at 77 K with the NLDFT isotherms, where the condensation pressures at 77 K were determined by extrapolating a plot of the equilibrium pressure versus temperature measured above Tch. The pore critical temperature (Tcp) was also determined from the inflection point in a plot of the inverse slope of the adsorption step against temperature. Tch is always lower than Tcp. Both plots of (Tc−Tch)/Tc versus d/rp and (Tc−Tcp)/Tc versus d/rp form straight lines passing through the origin, where d is the molecular diameter, although the former plot deviate from the linear relationship at large pores; Tch approaches Tcp in large pores. This strongly suggests that in large pores the energy barrier from the metastable state to the stable state is too large to be overcome within the period of observations even at the high temperatures just below Tcp.

transport, solubility suitable for solution processing, thermal stability sufficient for curing, and chemical stability in air. The compound 3,11-didecyldinaphtho[2,3d:2′,3′-d′]benzo [1,2-b:4,5-b′]dithiophene (C 10 -DNBDT-NW) is an example of a p-type compound. This semiconductor shows a hole mobility of 16 cm 2 V −1 s −1 , moderate solubility in common aromatic solvents such as o-dichlorobenzene (≈0.1 wt%) at 60 °C, and excellent stability up to 200 °C. [3] It has also been reported that the n-type materials N,N′-1H,1Hperfluorobutyldicyanoperylene-carboxydiimide (PDIF-CN 2 ) and benzo [1,2-c:4,5-c′] bis ([1,2,5]thiadiazole) (BBT), both of which are solution-processable in air, exhibit electron mobilities as high as 1.3 and 0.61 cm 2 V −1 s −1 , respectively. [8,9] Currently, it is anticipated that the next step in the evolution of electronics will be to establish reliable and reproducible fabrication processes for integrated electronic devices that have practical applications. As an example, hundreds of transistors must operate simultaneously in the integrated circuits of low-cost plastic sensor films [10,11] and radio-frequency identification (RFID) tags, [12,13] which are presently the most important devices associated with advances in materials science. Herein, we report a method of fabricating fully functionalized wireless digital sensor circuits, employing recent material innovations based on high-performance painted OFETs. Using these devices, it is anticipated that exceptional quantities of data will be able to be extracted from low-cost film sensors, leading to a so-called Internet-of-Things community. This technology is based on continuously painting uniform single-crystalline films composed of p-and n-type organic semiconductors that are situated next to one another, allowing complementary circuits to be designed by connecting the films. To demonstrate the exceptional reliability and performance of such devices, this work performed the firstever successful demonstration of solution-processed digital sensor circuits incorporating binary counters, selectors, a thermosensor, an analog-digital converter, and a wireless communication unit. We note that mobility values close to the maximum possible values were realized in regions of the semiconductor Recent progress in the development of organic semiconductor materials has improved the performance of both p-and n-type transistors. Currently, it is anticipated that the next step in the evolution of electronics will be to establish a reliable fabrication technique for integrated electronic devices such as plastic sensor films and radio-frequency identification (RFID) tags. Herein, a new fabrication process to grow line-shaped organic single-crystalline films with widths on the order of one mm is reported. To realize large-scale complementary logic circuits, it is necessary to precisely control the growth conditions of p-type and n-type semiconductors when painting on different areas on the same substrate. This method makes it possible to fabricate highly ori...

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The purpose of the present study was to investigate the effect of seed particles on the precipitation behavior of weak base drugs in the small intestine. A simple in vitro infusion method was used to mimic in vivo processes. Dipyridamole, pioglitazone, topiroxostat, chlorpromazine, cinnarizine, and ketoconazole were used as model drugs. A drug was dissolved in 0.01 N HCl and infused into a pH 6.5 buffer. The existence of seed particles significantly affected the concentration-time profiles of the model drugs in the buffer. The maximum concentration was significantly reduced in the presence of seed particles (except for cinnarizine). In the case of dipyridamole, pioglitazone, and topiroxostat, the precipitants were crystalline from the beginning of precipitation. In contrast, the precipitants of ketoconazole, cinnarizine, and chlorpromazine were a mixture of amorphous and crystals. In conclusion, the presence of seed particles significantly affected the precipitation behavior of weak base drugs.