A method for generating threshold voltage (V th ) of thin-film transistors (TFTs) is proposed. This method is applied to the simplest pixel circuit, namely, one composed of two TFTs, a drive TFT and an address TFT, and one capacitor [i.e., two TFTs and one capacitor configuration], of active-matrix organic lightemitting diode (AM-OLED) displays. It involves two steps. First, source voltage of the drive TFT is quickly and precisely detected under the condition that carriers, namely holes, in the drive TFT are detrapped. Second, a simple subtraction and bit-shift operation are executed using the detected source voltage of the drive TFT. A prototype 3.8-in 480 × 320-pixel AM-OLED display was developed to confirm that a V th -distribution image produced by this method corresponds to nonuniform images of AM-OLED displays. Furthermore, the AM-OLED display produced highuniformity images when the V th distribution was compensated by the proposed method.Index Terms-Active-matrix organic light-emitting diode (AM-OLED), hysteresis, simplest pixel circuit, V th distribution.

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The localized electronic density of states gL(E) at the hydrogenated amorphous silicon/silicon nitride (a-Si:H/Si3N4) interfaces is evaluated by transient voltage spectroscopy (TVS). The gL(E) at the a-Si:H/Si3N4 interface is found to have a broad peak and a deep minimum, respectively, around 0.9 and 0.47 eV below the conduction-band edge. The positive fixed charge at the interface makes the flatband voltage of the a-Si:H/Si3N4 system negative and, hence, there is a finite band bending at the interface even at the gate bias of 0 V. The gL(E) of different samples fabricated under various preparation conditions varies from sample to sample, whereas threshold voltages of a-Si:H thin-film transistors are almost independent of their preparation, suggesting the presence of an equilibrium mechanism between the positive fixed charge and the defect density. A modification of gL(E) at a-Si:H/Si3N4 interfaces by bias annealing is definitely observed using TVS. The overall results obtained by TVS seem to support the defect pool model.

This paper aims to clarify the influence of Hannes Meyer's concept of "psychological effects" on socialist cities and architecture in the Soviet Union by analyzing two 1930s projects: Meyer's plan for the development and reconstruction of Greater Moscow, and the Bauhaus Brigade's design proposal for the Palace of the Soviets competition. Meyer's design, especially his idea to place skyscrapers in a widened Red Square, was intended to psychologically enhance the effect of mass demonstrations. Similarly, the Bauhaus Brigade's design employed technologically augmented flexible spaces and wide swaths of greenery to accommodate mass demonstrations. The objective of "psychological effects" was that the Soviet population would be conscious of constructing a new society in the Soviet Union. These concepts were heavily influenced by Meyer's early work in Weimar Germany, when he concluded that "psychological effects" elevated functionalism to a new level. A review of original design plans and unpublished documents yielded direct parallels with socialist realist architecture of the time, such as the People's Commissariat of Heavy Industry and the general redesign of Moscow, suggesting the ideas of Meyer and the Bauhaus Brigade strongly influenced the fundamentals of 1930s monumental architecture in the Soviet Union.

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