The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing.

The novel anthelmintic cyclodepsipeptide PF1022Awas isolated from cultured mycelia of Mycelia Sterilia PF1022 (FERMBP-267 1). It showed strong anthelmintic activities against Ascaridia galli in chickens. The structure of PF1022Awas determined to be cycloby spectroscopic analyses and chemical studies.In the course of screening for new anthelmintic antibiotics using Ascaridia galli1] as a test organism, the new cyclodepsipeptide PF1022A was isolated from a mycelial cake of Mycelia Sterilia2) PF1022. This paper describes the producing strain, isolation, physico-chemical properties, structure and biological activities of the cyclodepsipeptide. Producing OrganismThe strain PF1022 was isolated from a plant sample (Camelliajaponica) collected in Ibaraki Prefecture, Japan. The strain grew abundantly with white fluffy hyphae covering all over the Petri dish (> 85 mm) at 25°C in 7 days on the following four media; potato glucose agar, potato carrot agar, malt extract agar and oatmeal agar. The reverse side of the colony was initially white to light yellow. Soluble pigment formation was insignificant. The organism did not grow at 37°C. Anyparticular morphology such as conidia formation was not observed on various media after incubation at 25°C for 2 months. Therefore, we tentatively assigned strain PF1022 to Mycelia Sterilia2) (order Agonomycetales), until morphological characteristics become evident. The strain has been deposited in the Fermentation Research Institute, Agency of Industrial Science and Technology, Japan, which an accession number of FERM BP-2671. Fermentation Strain PF1022 on agar slant was inoculated into a 100-ml Erlenmeyer flask that contained 20ml of a seed medium consisting of 1.0% starch, 1.0% glucose, 0.5% cotton seed meal, 0.5% wheat germ, 0.5% soybean meal, 0.5% yeast extract, 0.1% MgSO4-7H2O, 0.2% CaCO3, 0.2% NaCl and tap water (pH 7.0). The inoculated flask was shaken on a rotary shaker (200 rpm) at 26°C for 7 days. Four milliliters of the first seed culture was transferred into 80ml of the same mediumin a 500-ml Erlenmeyer flask. After shaking at 26°C for 2 days, the second seed culture was added to a 50-literjar fermenter containing 35 liters of the following production medium; 3.0% maltose syrup, 1.0% soybean oil, 0.8% wheat germ, 1.0% soybean meal, 1.0% dry yeast, 0.3% CaCO3, 0.2% MgSO4-7H2O and 0.2% NaCl in tap water (pH 7.0 before sterilization). Fermentation was carried out at 26°C for 5 days with an air-flow rate of 20 liters per minute and an agitation of 250 rpm initially and then 400 rpm after 65 hours.

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The diffusion and activation of $n$-type impurities (P and As) implanted into $p$-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations indicated the existence of a sufficiently high number of impurities with increasing implanted doses. However, spreading resistance probe profiles of electrical concentrations showed electrical concentration saturation in spite of increasing doses and indicated poor activation of As relative to P in Ge. The relationships between the chemical and electrical concentrations of P in Ge and Si were calculated, taking into account the effect of incomplete ionization. The results indicated that the activation of P was almost the same in Ge and Si. The activation ratios obtained experimentally were similar to the calculated values, implying insufficient degeneration of Ge. The profiles of P in Ge substrates with and without damage generated by Ge ion implantation were compared, and it was clarified that the damage that may compensate the activated $n$-type dopants has no relationship with the activation of P in Ge.Comment: 6 pages, 4 figure

A series of tetrahydrobenzindoles was prepared, and the affinity of these compounds for the 5-hydroxytryptamine7 (5-HT7) receptor and other receptors was evaluated. Most of the compounds showed high affinity for the 5-HT7 receptor, and 2a-[4-(tetrahydropyridoindol-2-yl)butyl]tetrahydrobenzindole derivatives (26a-j) exhibited high selectivity for this receptor. The nature of the substituent at the 9-position of the tetrahydropyridindole ring affected the affinity for the 5-HT7 receptor, and the 9-carbamoyl moiety afforded increased selectivity. Compound 26j exhibited high affinity for the 5-HT7 receptor, with at least 280-fold selectivity over the 5-HT2 receptor. In a functional model of 5-HT7 receptor activation, this compound was confirmed to have 5-HT7 receptor antagonist activity. It should be a useful tool for clarifying the biological role of the 5-HT7 receptor.