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Magnesium oxide (MgO) prepared by both pulsed laser deposition and sputtering methods showed constriction of lattice constants. To emphasize the effect of the constriction of lattice constants, MgO prepared at high oxygen atmosphere and high substrate temperature, resulted in the growth of cubic-shaped magnesium oxide (MgO) nanoparticles on a Si substrate. In oxygen atmosphere, the nanocubic MgO was scattered on the substrate without the Si surface being covered by a MgO thin film. Interestingly, the growth of nanocubic MgO was restrained on the samples prepared in nitrogen atmosphere. The formation of nanocubic MgO is related to the deposition pressure as well as the etching effect provided by oxygen atmosphere.

Indium tin oxide (ITO) thin films were epitaxially grown on sapphire substrates by solid-source electron cyclotron resonance (ECR) plasma deposition. Compared with the other methods such as sputtering and evaporation methods, the ECR plasma method resulted in a flat surface and a low resistivity with a relatively low substrate temperature. The surface roughness was strongly dependent on the ratio of oxygen gas flow during deposition. With optimal deposition conditions, the ITO thin film epitaxially grew on a c-plane sapphire substrate with twelvefold symmetry. The surface roughness and resistivity were estimated to be 0.4 nm and 1.4×10-4 Ω·cm, respectively. The X-ray rocking curve revealed 0.025° of full width at half maximum (FWHM) on the epitaxial ITO thin film. The ITO film deposited on an epitaxial GaN(001) layer on a c-plane sapphire substrate showed sixfold in-plane symmetry, indicating the epitaxial growth of ITO(111) on the GaN(001)/c-plane sapphire substrate.

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